PART |
Description |
Maker |
FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
MASWSS0020 MASWSS0020SMB MASWSS0020TR |
DC-3 GHz, GaAs SP4T 2.5V high power switch GaAs SP4T 2.5V High Power Switch DC - 3 GHz ER 9C 6#16 3#12 SKT RECP ER 9C 6#16 3#12 PIN RECP 砷化镓SP4T 2.5V的大功率开关直 3千兆
|
MA-Com MACOM[Tyco Electronics]
|
SW-106PIN SW-276PIN SW-106SW-276 |
High Power GaAs SPDT Switch DC - 3 GHz SX Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 3 A, Pin Plunger Actuator, Solder Termination High Power GaAs SPDT Switch DC3 GHz Schottky Barrier Diodes
|
Tyco Electronics
|
TC1501 |
1W High Linearity and High Efficiency GaAs Power FETs
|
Transcom, Inc.
|
FLL21E090IK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
AS218-321 AS218-321LF |
PHEMT GaAs IC High Power Transfer Switch DC?6 GHz PHEMT GaAs IC High Power Transfer Switch DC-6 GHz PHEMT GaAs IC High Power Transfer Switch DC6 GHz
|
Skyworks Solutions Inc. ETC
|
TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor Toshiba Corporation
|
MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L,S BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLL1200IU- FLL1200IU-3 |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Eudyna Devices Inc
|
FLL600IQ-2C |
L-Band High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|